Precision, Low Power, 18MHz Transimpedance Amplifier

FEATURES OVER 250kHz TRANSIMPEDANCE BANDWIDTH DYNAMIC RANGE: 5 Decades EXCELLENT LONG-TERM STABILITY LOW VOLTAGE NOISE: 10nV/√Hz BIAS CURRENT: 3pA OFFSET VOLTAGE: 25μV (max) OFFSET DRIFT: 0.1μV/°C (max) GAIN BANDWIDTH: 18MHz QUIESCENT CURRENT: 800μA FAST OVERLOAD RECOVERY SUPPLY RANGE:

Precision, Low Power, 18MHz Transimpedance Amplifier

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Precision, Low Power, 18MHz Transimpedance Amplifier

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Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch

Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: • Silicon Gate for Fast Switch

PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2381 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular or PCS band and for W-CDMA systems. The features of this device include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Ar

PCS/CELLULAR TDMA/CDMA/W-CDMA LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2381 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular or PCS band and for W-CDMA systems. The features of this device include linear gain control, high gain, and high linearity. The IC is manufactured on an advanced Gallium Ar

FAMILY OF MICROPOWER RAIL-TO-RAIL INPUT AND OUTPUT OPERATIONAL AMPLIFIERS

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