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型号	功能描述	生产厂家企业	LOGO
MURS160	丝印代码：S160；Super-Fast Rectifiers 文件：336.55 Kbytes Page：3 Pages	BILIN 银河微电	BILIN
MURS160	丝印代码：S160；Ultrafast power diode 文件：397.49 Kbytes Page：10 Pages	WEEN 瑞能半导体	WEEN
S160	Linear Shaft Motor 文件：817.79 Kbytes Page：4 Pages	NPM 脉冲马达	NPM
S160	包装：散装描述：CUTTER OVAL BEVEL 工具钢丝钳	SWANSTROM	SWANSTROM
GP1600SA	丝印代码：S1600A；STANDARD RECTIFIER Features · Glass Passivated Chip · Low Forward Voltage Drop · Low Profile package · High Surge Current Capability · Easy pick and place · Plastic Case Material has UL Flammability Classification Rating 94V-O	DAESAN	DAESAN
MURS160F	丝印代码：S160F；Super-Fast Rectifiers 文件：232.97 Kbytes Page：3 Pages	BILIN 银河微电	BILIN
S16008LK9	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK7FB-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK7FB-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK7FC-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK7FC-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK7TW-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK7TW-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK8FB-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK8FB-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK8FC-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK8FC-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK8TW-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK8TW-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK9FB-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK9FB-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK9FC-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK9FC-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK9TW-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9LK9TW-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK7FB-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK7FB-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK7FC-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK7FC-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK7TW-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK7TW-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK8FB-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK8FB-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK8FC-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK8FC-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK8TW-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK8TW-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK9FB-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK9FB-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK9FC-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK9FC-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK9TW-75A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S16008LK9MK9TW-8A	SYVCHRONOUS DRAM [SPECTEK] General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a prog	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
S1603-8	TVS ARRAY SERIES Protects 3.3, 5, 12, 15, 24 V Components Unidirectional Provides Electrically Isolated Protection 300 W @ 8/20 us Protects 8 Lines SO-16 Packaging “-A” is an AEC-Q101 qualified device This is a Pb - Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered	SMCDIODE 桑德斯微电子	SMCDIODE
S1605-8	TVS ARRAY SERIES Protects 3.3, 5, 12, 15, 24 V Components Unidirectional Provides Electrically Isolated Protection 300 W @ 8/20 us Protects 8 Lines SO-16 Packaging “-A” is an AEC-Q101 qualified device This is a Pb - Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered	SMCDIODE 桑德斯微电子	SMCDIODE
S1607	SKINTOP® SLM/SLRM Strain relief with metric thread Application advantage • The heavy duty SKINTOP® design provides great pullout strength and very reliable strain relief • Superior integrated locking mechanism includes an internal ratchet for vibration-proof protection • Multi-trapezoidal thread requires just one twist to tighten • Generous	LAPP 缆普	LAPP
S1609	SKINTOP® SLM/SLRM Strain relief with metric thread Application advantage • The heavy duty SKINTOP® design provides great pullout strength and very reliable strain relief • Superior integrated locking mechanism includes an internal ratchet for vibration-proof protection • Multi-trapezoidal thread requires just one twist to tighten • Generous	LAPP 缆普	LAPP
S16002G	Lan transformer	ETC 知名厂家	ETC
S16008-33	Si 光电二极管	HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社	HAMAMATSU
S16012	单口百兆POE贴片网络变压器	ETC 知名厂家	ETC
S160156024	包装：散装描述：RELAY GEN PURPOSE SPDT 8A 24V 继电器功率继电器，高于 2 A	ETC 知名厂家	ETC
S1603-8	SO-16 文件：129.08 Kbytes Page：4 Pages	SMC 桑德斯微电子	SMC
S1605-8	SO-16 文件：129.08 Kbytes Page：4 Pages	SMC 桑德斯微电子	SMC
S160D	Linear Shaft Motor 文件：817.79 Kbytes Page：4 Pages	NPM 脉冲马达	NPM
S160D-1S	Linear Shaft Motor 文件：817.79 Kbytes Page：4 Pages	NPM 脉冲马达	NPM
S160Q	Linear Shaft Motor 文件：817.79 Kbytes Page：4 Pages	NPM 脉冲马达	NPM
S160Q-1S	Linear Shaft Motor 文件：817.79 Kbytes Page：4 Pages	NPM 脉冲马达	NPM
S160Q-2S	Linear Shaft Motor 文件：817.79 Kbytes Page：4 Pages	NPM 脉冲马达	NPM
S160T	Linear Shaft Motor 文件：817.79 Kbytes Page：4 Pages	NPM 脉冲马达	NPM
S160T-1S	Linear Shaft Motor 文件：817.79 Kbytes Page：4 Pages	NPM 脉冲马达	NPM

S160产品属性

类型
描述
型号
S160
制造商
Bahco
功能描述
SOCKET SET 1/4DRV
制造商
Bahco
功能描述
SOCKET SET, 1/4DRV
制造商
Bahco
功能描述
SOCKET SET, 1/4DRV;
SVHC
No SVHC(19-Dec-2012); Driver
Size
1/4 ;RoHS
Compliant
NA

S160供应商更多...

更新时间：2026-3-15 18:28:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市华斯顿科技有限公司	MURS160	BL	25+23+	SMA	30970	绝对原装正品全新进口深圳现货	询价
深圳市明嘉莱科技有限公司	MURS160	GULF	24+	SMB	990000	明嘉莱只做原装正品现货	询价
标准国际(香港)有限公司	MURS160	MURS160	25+	2904	2904		询价
深圳市中联芯电子有限公司	MURS160T3G	ON/安森美	24+	SMB	10000	只做原装欢迎含税交易,假一赔十,放心购买	询价
深圳市一线半导体有限公司	MURS160	MICRO	24+		116500	现货供应	询价
深圳冠荣电子有限公司	MURS160	SUNMATE(森美特)	2019+ROHS	DO-214AA(SMB)	66688	森美特高品质产品原装正品免费送样	询价
深圳诚思涵科技有限公司	MURS160	VISHAY	19+	DO-214AA(SMB)	200000		询价
天津市博通航睿技术有限公司	MURS160	YANGJIE			10		询价
北京京北通宇电子元件有限公司	MURS160	HOTTECH	24+	con	10	现货常备产品原装可到京北通宇商城查价格	询价
深圳市创新迹电子有限公司	MURS160	CREATEK	22+	SMB	20000	公司只有原装品质保障	询价

S160芯片相关品牌

S160规格书下载地址

S160参数引脚图相关

S160数据表相关新闻

S1D13L01F00A100
S1D13L01F00A100
2023-6-25
S-1137A27-I6T2G
https://hch01.114ic.com/
2020-11-13
S1S60020F00A1
https://hch01.114ic.com/
2020-11-13
S18016
S18016,当天发货0755-82732291全新原装现货或门市自取.
2020-10-25
S15LGYPQ
Banner Engineering S15L 系列指示灯 Banner Engineering 的串联指示灯可一目了然地提供传感器电源和输出状态
2020-3-6
S-1339D30-M5TIU3
S-1339D30-M5TIU3，全新原装当天发货或门市自取0755-82732291.
2019-2-24

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找IC，尽在114IC

S160产品属性

S160供应商更多...

S160芯片相关品牌

S160规格书下载地址

S160参数引脚图相关

S160数据表相关新闻

S1D13L01F00A100

S-1137A27-I6T2G

S1S60020F00A1

S18016

S15LGYPQ

S-1339D30-M5TIU3

DdatasheetPDF页码索引