SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

GENERAL PURPOSE AMPLIFIER AND LOW NOISE AMPLIFIER APPLICATIONS. FEATURES: - Excellent hFE Linearity : hFE (0.1mA) hFE (2mA) =0.95(Typ.) . Designed for Complementary Use with S1420(hFE =70 700 ; . Small Collector Output Capacitance: C ob =4. 5pF(Max.)

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING HAMMER DRIVER, PULSE MOTOR DRIVER)

SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : VCEO=-120V (Min.) • Complementary to KTD1413.

5-Dot Red/Green LED Level Meter

SMALL SIGNAL GaAs FET?

DESCRIPTION The MGF1423B, low-noise GaAs FET with an N-channel Schottky gate, is designed for use in S to Ku band amplifiers. FEATURES ● High linear power gain GLP = 11 dB (TYP.) @ f = 12 GHz ● High output power at 1 dB gain compression P1dB = 13dBm (TYP.) @ f = 12 GHz ● High reliabil

RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS

DESCRIPTION The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as a medium power output device or as the driver for the SD1424. ■

HIGH PERFORMANCE 4K X 4 CMOS STATIC RAM

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