丝印代码：S125；BUS BUFFER/LINE DRIVER 3-STATE

Features » Operate from 1.65V to 5.5V » Inputs Accept Voltages to 5.5V » High Noise Immunity » Low Power Dissipation « ESD Protection Exceeds JESD 22 -2000-V Human-Body Model (A114-A) -200-V Machine Model (A115-A) ~1000-V Charged-Device Model (C101)

SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers

SUPER FAST RECOVERY DIODE SCHOTTKY DIODE GLASS PASSIVATED BRIDGE RECTIFIER

Surface Mount Si-Bridge Rectifiers

Surface Mount Si-Bridge Rectifiers Forward Current: 0,8 A Reverse Voltage: 80 to 1000 V

GLASS PASSIVATED SILICON BRIDGE RECTIFIERS

FEATURES ◇ Rating to 1000 V ◇ Low forward voltage drop ◇ Small size,plastic case ◇ Glass passivated junction ◇ Weight: 0.0078 ounces, 0.22grams ◇ Mounting position: Any

VOLTAGE 50V ~ 1000V 0.8AMP Single Phase Surface Mount Bridge Rectifiers

FEATURES * Ideal for printed circuit board * Reliable low cost construction utilizing molded plastic technique * High surge current capability * Polarity: Symbol molded on body * Mounting position: Any * Weight: 0.12 grams

Surface Mount Si-Bridge Rectifiers

Surface Mount Si-Bridge Rectifiers • Nominal current 0.8 A • Alternating input voltage 40…500 V • Plastic case 4.7 x 3.9 x 2.4 [mm] • Weight approx. 0.1 g • Plastic material has UL classification 94V-0 • Standard

SMD Single Phase Bridge Rectifier

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Slim Profile Surface Mount Si-Bridge-Rectifiers

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SMD Single Phase Bridge Rectifier

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Slim Profile Surface Mount Si-Bridge-Rectifiers

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Surface Mount Si-Bridge-Rectifiers

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Schottky Brrier Chip

文件：1.09259 Mbytes Page：2 Pages

封装/外壳：模块，SMA 连接器 包装：盒 描述：PIN SWITCH RF/IF，射频/中频和 RFID 射频开关

Bridge Rectifiers, Single Phase

丝印代码：S125SEP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

丝印代码：S125SEP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

丝印代码：S125SEP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

丝印代码：S125SEP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

丝印代码：S125SEP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

丝印代码：S125SEP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

丝印代码：S125SEP；SN54SC4T125-SEP Radiation Tolerant, Single Power Supply Quadruple Buffer Translator GATE With 3-State Output CMOS Logic Level Shifter

1 Features • VID V62/23631-01XE • Radiation Tolerant – Single Event Latch-Up (SEL) immune up to 43 MeV-cm2/mg at 125°C – Total Ionizing Does (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30 krad(Si) – Single Event Transient (SET) characterized up to LET = 43 MeV-

Adhesives Selection Guide

Adhesives and Sealants That Accommodate a Wide Range of Applications, Materials, and Environmental Conditions

300A Threaded Stud Type Screw Silicon Diode for Generator Exciter

Features ※ ThinkiSemi matured process rectifier diodes ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Brushless Exc

300A Threaded Stud Type Screw Silicon Diode for Generator Exciter

Features ※ ThinkiSemi matured process rectifier diodes ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Brushless Exc

Fast Switching Surface Mount Si-Bridge-Rectifiers

Fast Switching Surface Mount Si-Bridge-Rectifiers • Nominal current 0.8 A • Alternating input voltage 40 380 V • Plastic case TO-269AA • Weight approx. 0.1 g • Plastic material has UL classification 94V-0 • Standard pac

Protectifiers - LowVF Bridge Rectifier with Overvoltage Protection

Protectifiers® – LowVF Bridge Rectifier with Overvoltage Protection • Nominal current 0.8 A • Alternating input voltage 125V, 250 V • Plastic case slim profile 1.6mm TO-269AA • Weight approx. 0.1

有源晶振

有源晶振

包装：散装 描述：TAPE EPOXY BLACK 3/4\ 胶带，粘合剂，材料 胶带

CCD linear image sensor

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Stainless Disc Springs

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Stainless Disc Springs

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Stainless Disc Springs

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Low afterpulses, wide dynamic range, for high-speed measurement Photosensitive area: 1 x 1 mm

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multi-pixel photon counter

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multi-pixel photon counter)

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multi-pixel photon counter)

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multi-pixel photon counter)

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multi-pixel photon counter)

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multi-pixel photon counter

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multi-pixel photon counter

文件：396.09 Kbytes Page：6 Pages

multi-pixel photon counter

文件：396.09 Kbytes Page：6 Pages

multi-pixel photon counter

文件：396.09 Kbytes Page：6 Pages

Low afterpulse, for very low light-level measurement Photosensitive area: 1 x 1 mm, 3 x 3 mm

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GENERAL PRODUCTS CATALOG

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Current Sense Transformer

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Slim Profile Fast Switching Surface Mount Si-Bridge-Rectifiers

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SMD Single Phase Bridge Rectifier ??Fast Recovery

文件：187.09 Kbytes Page：2 Pages

SMD Single Phase Bridge Rectifier

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SMD Single Phase Bridge Rectifier

文件：219.71 Kbytes Page：3 Pages

CURRENT 0.8 AMPERES VOLTAGE 100 TO 1000 VOLTS

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Low Power Loss,High Efficiency

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General Purpose Silicon Rectifier

Description: The NTE125 is a general purpose silicon rectifier in a DO41 case designed for low power and switching applications.

CERMAX XENON ARC LAMPS

Description The Cermax® xenon arc lamp is an innovative lamp design in the specialty lighting industry. These lamps were introduced in the early 1980’s and are now used in endo-scopes in most major hospitals worldwide, in high brightness projection display systems, and for a wide variety of other

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12