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S125K

Protectifiers - LowVF Bridge Rectifier with Overvoltage Protection

Protectifiers® – LowVF Bridge Rectifier with Overvoltage Protection • Nominal current 0.8 A • Alternating input voltage 125V, 250 V • Plastic case slim profile 1.6mm TO-269AA • Weight approx. 0.1

DIOTEC

德欧泰克

S125K

SMD Single Phase Bridge Rectifier

文件:219.71 Kbytes Page:3 Pages

DIOTEC

德欧泰克

S125K

Bridge Rectifiers, Single Phase

DIOTEC

德欧泰克

SMD Single Phase Bridge Rectifier

文件:219.71 Kbytes Page:3 Pages

DIOTEC

德欧泰克

General Purpose Silicon Rectifier

Description: The NTE125 is a general purpose silicon rectifier in a DO41 case designed for low power and switching applications.

NTE

CERMAX XENON ARC LAMPS

Description The Cermax® xenon arc lamp is an innovative lamp design in the specialty lighting industry. These lamps were introduced in the early 1980’s and are now used in endo-scopes in most major hospitals worldwide, in high brightness projection display systems, and for a wide variety of other

PERKINELMER

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectification.

PHILIPS

飞利浦

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

MOTOROLA

摩托罗拉

S125K产品属性

  • 类型

    描述

  • Package:

    TO-269AA/MiniDIL

  • VRRM:

    190 V

  • IFAV:

    1.00 A

  • Tjmax:

    150 °C

  • trr:

    ns

  • IFSM:

    50.00 A

  • VF:

    0.95 V

  • IF:

    1.00 A

  • IR:

    5.000 µA

  • Cj:

    pF

  • VR:

    V

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