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型号 功能描述 生产厂家 企业 LOGO 操作
S10C35D

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

SchottkyBarrier Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling an

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

SchottkyBarrier Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling an

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

SchottkyBarrier Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling an

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

SchottkyBarrier Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling an

MOSPEC

统懋

Schottky Barrier Rectifiers

SchottkyBarrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling

MOSPEC

统懋

S10C35D产品属性

  • 类型

    描述

  • 型号

    S10C35D

  • 制造商

    MOSPEC

  • 制造商全称

    Mospec Semiconductor

  • 功能描述

    SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

更新时间:2026-5-20 15:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOSPEC
24+
TO-220
8866
mospec
22+
TO-
6000
十年配单,只做原装

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