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S10C35CE中文资料

厂家型号

S10C35CE

文件大小

160.8Kbytes

页面数量

2

功能描述

Schottky Barrier Rectifiers

数据手册

下载地址一下载地址二

生产厂商

MOSPEC

S10C35CE数据手册规格书PDF详情

SchottkyBarrier Rectifiers

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling and polarityprotection diodes.

*LowForward Voltage.

*LowSwitching noise.

*High Current Capacity

*Guarantee Reverse Avalanche.

*Guard-Ring for Stress Protection.

*LowPower Loss & High efficiency.

*150℃ Operating Junction Temperature

*LowStored Charge MajorityCarrier Conduction.

*Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O

S10C35CE产品属性

  • 类型

    描述

  • 型号

    S10C35CE

  • 制造商

    MOSPEC

  • 制造商全称

    Mospec Semiconductor

  • 功能描述

    Schottky Barrier Rectifiers

更新时间:2025-10-15 17:59:00
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