丝印代码：S1051；12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for Bus-Oriented Systems description/ordering information This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device c

丝印代码：S1051；12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for Bus-Oriented Systems description/ordering information This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device c

丝印代码：S1051；12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for Bus-Oriented Systems description/ordering information This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device c

丝印代码：S1051；12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for Bus-Oriented Systems description/ordering information This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device c

丝印代码：S1051；12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for Bus-Oriented Systems description/ordering information This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device c

丝印代码：S1051；12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for Bus-Oriented Systems description/ordering information This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device c

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

丝印代码：S1053；16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for Bus-Oriented Systems Package Options Include Plastic Small-Outline Packages and Standard Plastic 300-mil DIPs description This Schottky barrier diode bus-termination array is

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

High Precision Foil Resistor with TCR of ± 2.0 ppm/°C, Tolerance of ± 0.005 and Load Life Stability of ± 0.005

INTRODUCTION Bulk Metal® Foil (BMF) technology outperforms all other resistor technologies available today for applications that require high precision and high stability. This technology has been pioneered and developed by VISHAY, and products based on this technology are the most suitable for

High Precision Foil Resistor with TCR of ± 2.0 ppm/°C, Tolerance of ± 0.005 and Load Life Stability of ± 0.005

INTRODUCTION Bulk Metal® Foil (BMF) technology outperforms all other resistor technologies available today for applications that require high precision and high stability. This technology has been pioneered and developed by VISHAY, and products based on this technology are the most suitable for

High Precision Foil Resistor with TCR of ± 2.0 ppm/°C, Tolerance of ± 0.005 and Load Life Stability of ± 0.005

INTRODUCTION Bulk Metal® Foil (BMF) technology outperforms all other resistor technologies available today for applications that require high precision and high stability. This technology has been pioneered and developed by VISHAY, and products based on this technology are the most suitable for

包装：盒 描述：TERMINATOR SCSI-3 INTERNAL 68POS 连接器，互连器件 D-Sub，D 形连接器端接器

Stainless Disc Springs

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Stainless Disc Springs

文件：57.03 Kbytes Page：3 Pages

Stainless Disc Springs

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平面肖特基

Fixed Inductors for Digital Audio Amplifier

文件：90.24 Kbytes Page：1 Pages

Electrical Specifications

文件：1.2956 Mbytes Page：2 Pages

Fixed Inductors for Digital Audio Amplifier

文件：90.24 Kbytes Page：1 Pages

Electrical Specifications

文件：1.2956 Mbytes Page：2 Pages

Electrical Specifications

文件：1.2956 Mbytes Page：2 Pages

DEVICE SPECIPICATION FOR SOLID STATE REPLAY

文件：365.61 Kbytes Page：12 Pages

DEVICE SPECIPICATION FOR SOLID STATE REPLAY

封装/外壳：4-SIP 包装：管件 描述：SSR RELAY SPST-NO 5A 0-120V 继电器 固态继电器

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

Hybrid Power Module

The RF Line VHF Power Amplifier The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 volt supply and requires only 1.0 mW of RF input power. • Specified 7.5 Volt Characteristics: RF Input Power — 1.0 mW (0

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc