HIGH-FREQUENCY LOW-NOISE AMPLIFIER

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 6-PIN 2 u 2SC4226) THIN-TYPE SMALL MINI MOLD

FEATURES

• Low-noise

NF= 1.2 dBTYP.@ f = 1 GHz, VCE = 3V, IC = 7mA

• High gain

IS21el2 = 9.0 dBTYP. @ f = 1 GHz, VCE = 3V, IC = 7mA

• 6-pin thin-type small mini mold package adopted

• Built-in 2 transistors (2 u 2SC4226)