DESCRIPTION

The μ PA2211T1M is P-channel MOS Field Effect Transistor designed

for power management applications of portable equipments, such as

load switch.

FEATURES

• Low on-state resistance

RDS(on)1 = 25 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)

RDS(on)2 = 34 mΩ MAX. (VGS = −2.5 V, ID = −3.8 A)

RDS(on)3 = 66 mΩ MAX. (VGS = −1.8 V, ID = −3.8 A)

• Built-in gate protection diode

• −1.8 V Gate drive available