DESCRIPTION

The μ PA2201T1M is N-channel MOS Field Effect Transistor designed

for power management applications of portable equipments, such as

load switch.

FEATURES

• Low on-state resistance

RDS(on)1 = 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A)

RDS(on)2 = 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A)

• Built-in gate protection diode

• 2.5 V Gate drive available