DESCRIPTION

This product is N-and P-Channel MOS Field Effect Transistor designed for motor driver applications.

FEATURES

• Dual chip type

• Low on-resistance

N-Channel RDS(on)1 = 0.12 Ω TYP. (VGS = 10 V, ID = 0.5 A)

RDS(on)2 = 0.19 Ω TYP. (VGS = 4 V, ID = 0.5 A)

P-Channel RDS(on)1 = 0.45 Ω TYP. (VGS = –10 V, ID = –0.35 A)

RDS(on)2 = 0.74 Ω TYP. (VGS = –4 V, ID = –0.35 A)

• Low input capacitance

N-Channel Ciss = 180 pF TYP.

P-Channel Ciss = 230 pF TYP.

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)