Features

• Short circuit withstand time (5 μs typ.)

• Low collector to emitter saturation voltage

VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25°C)

• Built in fast recovery diode (100 ns typ.) in one package

• Trench gate and thin wafer technology

• High speed switching

tf = 40 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 37 A, Rg = 5 Ω, Ta = 25°C, inductive load)