Features

 Trench gate and thin wafer technology (G8H series)

 Built in fast recovery diode in one package

 Low collector to emitter saturation voltage

VCE(sat) = 1.5 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)

 Quality grade: Standard

 High speed switching

 Non-specification for short circuit

 Applications: UPS, Welding, photovoltaic

inverters, Power converter system