Description

The RBA160N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching

applications.

Features

• Super low on-state resistance

RDS(on) = 1.25 m MAX. ( VGS = 10 V, ID = 80A )

• Low input capacitance

Ciss = 8800pF TYP. ( VDS = 25 V )

• Designed for automotive application and AEC-Q101 qualified

• Pb-free (This product does not contain Pb in the external electrode)