DESCRIPTION

The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability.

FEATURES

• High Output Power : Po (1 dB) = +34.0 dBm typ.

• High Linear Gain : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E)

• High Efficiency : 30 typ.

• Input and Output Internally Matched for Optimum performance