FEATURES

• The device is an ideal choice for low noise, high gain amplification.

NF = 0.75 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz

Ga = 14 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.8 GHz

• PO (1 dB) = 4.5 dBm TYP. @ VCE = 2 V, IC (set) = 10 mA, f = 2 GHz

• Maximum stable power gain: MSG =16.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 5.8 GHz

• SiGe: C HBT technology

• This product is improvement of ESD.

• Flat-lead 4-pin thin-type super minimold (M04 PKG)