DESCRIPTION

The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT-

2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power (CW) with high

linear gain, high efficiency and low distortion. Its primary band is 1.8 to 2.3 GHz. The device employs 0.7 μm

Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal

characteristics, and reliability.

FEATURES

• Push-pull type GaAs FET

• VDS = 12.0 V operation

• High output power: Pout = 240 W TYP.

• High linear gain: GL = 12.0 dB TYP.

• High power added efficiency: ηadd = 45 TYP. @ VDS = 12.0 V, IDset = 2.0 A (total), f = 2.17 GHz

• Hollow plastic package