N-CHANNEL SILICON POWER LDMOS FET

FOR 160 W UHF-BAND SINGLE-END POWER AMPLIFIER

DESCRIPTION

The NEM091603P-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for 800 to 1 000

MHz applications, such as, GSM/EDGE/N-CDMA/W-CDMA/cdma2000 cellular base station. Dies are manufactured

using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and multi layer

aluminum silicon metallization offer a high degree of reliability.

FEATURES

• High 1 dB compression output power : PO (1 dB) = 160 W TYP. (VDS = 28 V, IDset = 1 200 mA,

f = 860 to 880 MHz CW)

• High linear gain : GL = 19.5 dB TYP. (VDS = 28 V, IDset = 1 200 mA, f = 860 to 880 MHz CW)

• High drain efficiency : ηd = 60 TYP. (VDS = 28 V, IDset = 1 200 mA, f = 860 to 880 MHz CW)

• Low intermodulation distortion : IM3 = −40 dBc TYP. (VDS = 28 V, IDset = 1 200 mA, f = 880/880.1 MHz,

Pout = 46.5 dBm (2 tones) )

: IM3 = −40 dBc TYP. (VDS = 28 V, IDset = 1 200 mA, f = 960/960.1 MHz,

Pout = 46.0 dBm (2 tones) )

• Internal matched (Input and Output) for ease of use

• Low cost hollow plastic packages

• 100 screening

• Integrated ESD protection

• Effective prevention against humidity

• Excellent stability against HCI (Hot Carrier Injection)

APPLICATION

• Digital cellular base station PA : GSM/EDGE/N-CDMA/W-CDMA/cdma2000 etc.