N-CHANNEL SILICON POWER LDMOS FET

FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER

DESCRIPTION

The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final

stage in 0.8 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/EDGE/D-AMPS/PDC cellular base station

amplifiers. Dies are manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride

surface passivation and triple layer aluminum silicon metallization offer a high degree of reliability.

FEATURES

• High 1 dB compression output power : PO (1 dB) = 75 W TYP. (VDS = 28 V, IDset = 550 mA, f = 960 MHz)

• High linear gain : GL = 17.5 dB TYP. (VDS = 28 V, IDset = 550 mA, f = 960 MHz)

• High drain efficiency : ηd = 54 TYP. (VDS = 28 V, IDset = 550 mA, f = 960 MHz)

• Low intermodulation distortion : IM3 = −31 dBc TYP. (VDS = 28 V, IDset = 550 mA, f = 960/960.1 MHz, Pout = 45 dBm (2 tones) )

• Excellent thermal stability

• Low cost hollow plastic packages

• Integrated ESD protection

• Excellent stability against HCI (Hot Carrier Injection)