GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

DESCRIPTION

NE76184A is a N-channel GaAs MES FET housed in ceramic

package. The device is fabricated by ion implantation for

improved RF and DC performance reliability and uniformity. Its

excellent low noise and high associated gain make it suitable

for DBS, TVRO, GPS and another commercial systems.

FEATURES

• Low noise figure & High associated gain

NF = 0.8 dB TYP., Ga = 12 dB TYP. at f = 4 GHz