DESCRIPTION

NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxy sealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. The NE76184AS is suitable for DBS, TVRO, GPS and other commercial applications.

• LOW NOISE FIGURE: 0.8 dB typical at 4 GHz

• HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz

• LG= 1.0 µm, WG= 400 µm

• LOW COST METAL/CERAMIC PACKAGE

• TAPE & REEL PACKAGING OPTION AVAILABLE