0.4 W L-BAND POWER GaAs HJ-FET

DESCRIPTION

The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile

communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• GaAs HJ-FET structure

• High output power

• High linear gain

• High power added efficiency