3 W L-BAND POWER GaAs HJ-FET

DESCRIPTION

The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile

communication systems. It is capable of delivering 3 W of output power with high linear gain, high efficiency and

excellent distortion.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• GaAs HJ-FET Structure

• High Output Power : PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/duty

PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty

• High Linear Gain : GL = 13 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty

GL = 8 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty

• High Power Added Efficiency : 58 typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty

52 typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty