0.2 W L, S-BAND POWER GaAs MES FET

DESCRIPTION

The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile

communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high

linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• High Output Power : PO (1 dB) = +23 dBm typ.

• High Linear Gain : 16 dB typ.

• High Power Added Efficiency: 45 typ. @VDS = 6 V, IDset = 50 mA, f = 1.9 GHz