1 W L-BAND POWER GaAs MES FET

DESCRIPTION

The NE6500179A is a 1 W GaAs MES FET designed for middle power transmitter applications for mobile

communication handset and base station systems. It is capable of delivering 1 W of output power (CW) with high

linear gain, high efficiency and excellent distortion.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

• High output power: PO (1 dB) = 30.0 dBm TYP.

• High linear gain: GL = 12.0 dB TYP.

• High power added efficiency: ηadd = 50 TYP. @ VDS = 6.0 V, IDset = 200 mA, f = 1.9 GHz