DESCRIPTION

The NE32984D is a Hetero Junction FET that utilizes the

hetero junction to create high mobility electrons. Its excellent

low noise and high associated gain make it suitable for DBS

and another commercial systems.

FEATURES

• Super Low Noise Figure & High Associated Gain

NF = 0.40 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz

• Gate Length : Lg d 0.20 Pm

• Gate Width : Wg = 200 Pm