DESCRIPTION

NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped

InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for

commercial systems, industrial and space applications.

FEATURES

• Super Low Noise Figure & High Associated Gain

NF = 0.35 dB TYP., Ga = 13.0 dB TYP. at f = 12 GHz

• Gate Length : Lg = 0.2 Pm

• Gate Width : Wg = 200 Pm