▪ Qualified to Renesas Rad Tolerant Screening and

QCI Flow (R34TB0004EU)

▪ Fabricated using P6 SOI process technology

▪ Rail-to-rail operation

▪ No latch-up

▪ Low rDS(ON): <120Ω (maximum)

▪ Single supply operation: 3V to 5.5V

▪ Adjustable logic threshold control

▪ Cold sparing capable: -0.4V to 7V

▪ Analog overvoltage range: -0.4V to 7V

▪ Switch input off leakage: 120nA

▪ Transition times (tAHL): 70ns

▪ Break-before-make switching

▪ ESD protection ≥5kV (HBM)

▪ Passes NASA low outgassing specifications

▪ NiPdAu lead finish (Pb-free, Sn-free)

▪ Operating temperature range: -55°C to +125°C

▪ TID Radiation Lot Acceptance Testing

(LDR: <0.01rad(Si)/s)

• ISL71030M30NZ: 30krad(Si)

• ISL71030M50NZ: 50krad(Si)

▪ SEE Characterization

• No DSEE for V+ = 7V at 43MeV•cm2/mg

• |VOUT SET| < 70mV with V+ = 5.5V and

VOUT = 2.75V at 43MeV•cm2/mg