Features

• Fabricated using P6 SOI process technology

• Rail-to-rail operation

• No latch-up

• Low rDS(ON): <120Ω (maximum)

• Single supply operation: 3V to 5.5V

• Adjustable logic threshold control

• Cold sparing capable: -0.4V to 7V

• Analog overvoltage range: -0.4V to 7V

• Switch input off leakage: 120nA

• Transition times (tAHL): 70ns

• Break-before-make switching

• ESD protection ≥5kV (HBM)

• Passes NASA low outgassing specifications

• NiPdAu lead finish (Pb-free, Sn-free)

• Operating temperature range: -55°C to +125°C

• Radiation tolerance

○ Low dose rate (0.01rad(Si)/s): 30krad(Si)

○ SEL/SEB LETTH (V+ = 6.5V): 43MeV•cm2/mg

Applications

• Telemetry signal processing

• Harsh environments

○ Down-hole drilling