Features

• Electrically screened to DLA SMD# 5962-14226

• Low input offset voltage. . . . . . . . . . . . . . . . . . . ±110μV, Max.

• Superb offset temperature coefficient. . . . . . . 1μV/°C, Max.

• Input bias current . . . . . . . . . . . . . . . . . . . . . . . . . ±15nA, Max.

• Input bias current TC . . . . . . . . . . . . . . . . . . . . ±5pA/°C, Max.

• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440μA

• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/Hz

• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V

• Operating temperature range. . . . . . . . . . . .-55°C to +125°C

• ISL70419SEH radiation acceptance testing

- High dose rate (50-300rad(Si)/s): 300krad(Si)

- Low dose rate (10mrad(Si)/s): 50krad(Si)

• ISL73419SEH radiation acceptance testing

- Low dose rate (10mrad(Si)/s): 50krad(Si)

• SEE hardness (see SEE report for details)

- SEL/SEB LETTH (VS = ±18V): 86.4MeV•cm2/mg