Features

• Electrically screened to DLA SMD # 5962-13248

Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer

• <5μs recovery from SET (LETTH = 86.4MeV•cm2/mg)

• Unity gain stable

• Rail-to-rail input and output

• Wide gain bandwidth product . . . . . . . . . . . . . . . . . . . . 19MHz

• Wide single and dual supply range. . .2.7V to 40V maximum

• Low input offset voltage . . . . . . . 400μV (+25°C, maximum)

• Low current consumption (per amplifier) . . . . 1.2mA, typical

• No phase reversal with input overdrive

• Slew rate

- Large signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V/μs

• Operating temperature range. . . . . . . . . . . .-55°C to +125°C

• ISL70244SEH radiation acceptance (see TID report)

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)

• ISL73244SEH radiation acceptance (see TID report)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .50krad(Si)

• SEE hardness (see SEE report for details)

- SEL/SEB LETTH (VS = ±19V) . . . . . . . . . 86.4MeV•cm2/mg

Applications

• Precision instruments

• Active filter blocks

• Data acquisition

• Power supply control

• Process control