Features

• Electrically screened to SMD # 5962-07218

• QML qualified per MIL-PRF-38535 requirements

• Radiation tolerance

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*

- SEL immune . . . . . . . . . . Bonded wafer dielectric isolation

• NPN gain bandwidth product (FT) . . . . . . . . . . . . . .8GHz (typ)

• NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 (typ)

• NPN early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 50V (typ)

• PNP gain bandwidth product (FT). . . . . . . . . . . . . 5.5GHz (typ)

• PNP current gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . . 60 (typ)

• PNP early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 20V (typ)

• Noise figure (50) at 1GHz. . . . . . . . . . . . . . . . . . . 3.5dB (typ)

• Collector-to-collector leakage . . . . . . . . . . . . . . . . . . <1pA (typ)

• Complete isolation between transistors

* Limit established by characterization.