Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The ISL73096RH consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127RH consists of five NPN transistors on a common substrate. The ISL73128RH consists of five PNP transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment.

Features

• Electrically Screened to SMD # 5962-07218

• QML Qualified per MIL-PRF-38535 Requirements

• Radiation Environment

- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 105RAD(Si)

- SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation

• NPN Gain Bandwidth Product (FT) . . . . . . . . .8GHz (Typ)

• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . 130 (Typ)

• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 50V (Typ)

• PNP Gain Bandwidth Product (FT). . . . . . . . 5.5GHz (Typ)

• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . 60 (Typ)

• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 20V (Typ)

• Noise Figure (50Ω) at 1GHz . . . . . . . . . . . . . .3.5dB (Typ)

• Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ)

• Complete Isolation Between Transistors

Applications

• High Frequency Amplifiers and Mixers

- Refer to Application Note AN9315

• High Frequency Converters

• Synchronous Detector