SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK3108 is N channel MOS FET device that features a

low on-state resistance and excellent switching characteristics,

and designed for high voltage applications such as DC/DC

converter.

FEATURES

•Gate voltage rating ±30 V

•Low on-state resistance

RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 4.0 A)

•Low input capacitance

Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)

•Avalanche capability rated

•Built-in gate protection diode

•Isolated TO-220 package