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2SK3070L-E中文资料
2SK3070L-E数据手册规格书PDF详情
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on)=4.5 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
更新时间:2025-10-10 16:01:00
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS |
2014+ |
100 |
公司现货库存 |
||||
RENESAS/瑞萨 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
24+ |
30000 |
||||||
SANYO |
16+ |
CP |
66540 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
SANYO/三洋 |
20+ |
CP |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
SANYO |
1922+ |
SOT-23 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
SANYO |
24+ |
CP |
66540 |
原装现货假一赔十 |
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