General Features

VDS =-60V,ID =-61A

RDS(ON) < 22mΩ @ V GS = -10V

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Special designed for convertors and power controls

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Special process technology for high ESD capability

RDS(ON)