Satellite Broadcast Reception & Distribution

DC-DC Boost Converter for PWM Controller

General Description The RT4809 is a DC-DC boost converter which is designed to provide the power of PWM controller. The RT4809 incorporates voltage mode, fixed-frequency, pulse width modulation (PWM) circuitry with a built in N-MOSFET to achieve high efficiency and fast transient response. T

丝印代码：6X；DC-DC Boost Converter for PWM Controller

General Description The RT4809 is a DC-DC boost converter which is designed to provide the power of PWM controller. The RT4809 incorporates voltage mode, fixed-frequency, pulse width modulation (PWM) circuitry with a built in N-MOSFET to achieve high efficiency and fast transient response. T

用于智能型手机和平板计算机的双输出LCD偏置

Dual Output LCD Bias for Smartphones and Tablets

文件：1.73358 Mbytes Page：22 Pages

Dual Output LCD Bias for Smartphones and Tablets

文件：1.73358 Mbytes Page：22 Pages

智能手机和平板电脑液晶屏双输出偏置电源

封装/外壳：15-UFBGA，WLCSP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG CONV TFT LCD 2OUT WLCSP15 集成电路（IC） 特殊用途稳压器

封装/外壳：16-UFBGA，WLCSP 功能：升压 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC REG BOOST ADJ 2A 16WLCSP 集成电路（IC） DC DC 开关稳压器

Synchronous Boost Regulator with Bypass Mode

文件：1.10359 Mbytes Page：22 Pages

Synchronous Boost Regulator with Bypass Mode

文件：1.10359 Mbytes Page：22 Pages

Synchronous Boost Regulator

文件：1.11756 Mbytes Page：23 Pages

Synchronous Boost Regulator

文件：1.11756 Mbytes Page：23 Pages

NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

丝印代码：P6；NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

Metal Oxide Varistors (MOV)

Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby

Shottky barrier diode

Features High reliability Small mold type Low VF Application Small current rectification