Composite Transistor With Resistor

DESCRIPTION RT3N55M is a composite transistor built with two RT1N144 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver cir

复合晶体管

HIGH VOLTAGE POWER MOSFET N-CHANNEL

[SEMICONDUCTOR TECHNOLOGY, INC.] HIGH VOLTAGE POWER MOSFET N-CHANNEL CASE OUTLINE: TO-220

Power Field Effect Transistor

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Tim

Power Field Effect Transistor

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Tim

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 550V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Fast Switching

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