Composite Transistor

DESCRIPTION RT3K33M is a composite transistor built with two INK0003AX chips in SC-88 package. FEATURE ◾ Input impedance is high, and not necessary to consider a drive electric current. ◾ Vth is low, and drive by low voltage is possible. Vth=0.6～1.2V ◾ Low on Resistance. Ron=0.9Ω(TYP) ◾ High

MOS型场效应晶体管（MOS-FET）

Surface Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Available in bidirectional polarity only • 3000 W peak pulse power capability with a (10/1000 μs) waveform • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Not recommende

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

Surface Mount TRANSZORB® Transient Voltage Suppressors

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