COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON PNP EPITAXIAL TYPE

DESCRIPTION RT2P03M is a composite transistor with built-in bias resistor FEATURE ● Built-in bias resistor ( R1=10 KΩ , R2=10KΩ ) ● Mini package for easy mounting APPLICATION Inverted circuit , switching circuit , interface circuit , driver circuit

复合晶体管

6 mm Square Thin Type SMD Light Touch Switches

■ Features ● External dimensions : 6.0 mm6.1 mm, Height 5.0 mm (Including the push plate) ● Steady and low contact resistance (100 mΩ max.) ● Excellent solderability (J-bent-type terminals) ■ Recommended Applications ● Car electronics equipment

SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ene

2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET

This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulator

6 mm Square Thin Type SMD Light Touch Switches

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