COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION RT2N12M is a composite transistor with built-in bias resistor FEATURE ● Built-in bias resistor ( R1=4.7 KΩ , R2=47KΩ ) ● Mini package for easy mounting APPLICATION Inverted circuit , switching circuit , interface circuit , driver circuit

复合晶体管

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.75Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET

The RFP2N12L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a spec

Drain Current ID= 2A@ TC=25C

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N-Channel 100-V (D-S) MOSFET

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