| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RT1N150X | Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N150X is a one chip transistor with built-in bias resistor,PNP type is RT1P150X. FEATURE ◾ Built-in bias resistor (R1=100kΩ ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. | ISAHAYA 谏早电子 |   | |
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N150X is a one chip transistor with built-in bias resistor,PNP type is RT1P150X. FEATURE ◾ Built-in bias resistor (R1=100kΩ ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. | ISAHAYA 谏早电子 | | ||
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N150X is a one chip transistor with built-in bias resistor,PNP type is RT1P150X. FEATURE ◾ Built-in bias resistor (R1=100kΩ ). APPLICATION Inverted circuit,switching circuit,interface circuit, driver circuit. | ISAHAYA 谏早电子 | | ||
SILICON POINT CONTACT MIXER DIODES SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON POINT CONTACT MIXER DIODES SILICON POINT CONTACT MIXER DIODES ASI point contact mixer diodes are designed for applications from UHF through 26 GHz. | ETCList of Unclassifed Manufacturers 未分类制造商 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MSCI |
专业军工 |
NA |
1000 |
只做原装正品军工级部分订货 |
|||
MSCI |
25+ |
NA |
98192 |
一站式BOM配单 |
|||
KNSCHA |
10 |
||||||
KNSCHA |
24+ |
con |
10 |
现货常备产品原装可到京北通宇商城查价格 |
|||
Talent |
24+ |
模块 |
400 |
||||
RICHTEK |
21+ |
QFN |
450 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
25+ |
电位计 |
12 |
就找我吧!--邀您体验愉快问购元件! |
|||
RICHTEK |
23+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
|||
MSCI |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
26+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
RT1N150X规格书下载地址
RT1N150X参数引脚图相关
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- RT148
- RT141B6
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- RT130B7
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2018-12-30
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