SiC SBD

丝印代码：HSC06065F；Silicon Carbide Schottky Diode

Features: • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • New Thin Wafer Technology • Positive Temperature Coefficient on VF • Temperature-independent Switching • Excellent surge current capability • 175°C Operating Junction Temperature Applications: • Switch Mode Power

丝印代码：06065TDW；SILICON CARBIDE SCHOTTKY DIODE

FEATURES • Positive temperature coefficient for safe operation and easy of paralleling • 175°C maximum operating junction temperature • Essentially no reverse or forward recovery • Extremely fast switching not dependent on temperature • Qualified according to AEC-Q101 Rev_D • Lead-Free Fini

丝印代码：LSC06065W；SILICON CARBIDE SCHOTTKY DIODE

FEATURES Positive temperature coefficient for safe operation and easy of paralleling 175oC maximum operating junction temperature Essentially no reverse or forward recovery Extremely fast switching not dependent on temperature Qualification is according to AEC-Q101 Rev_D Lead-Free Finish; R

6A竊?50V Silicon Carbide Diode

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Enhanced surge capability

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