丝印代码：20P07N；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE20P07N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-7A RDS(ON)

Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 defini

Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers

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Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers

文件：139.27 Kbytes Page：2 Pages

20A, 50V - 1000V Glass Passivated Bridge Rectifiers

文件：206.9 Kbytes Page：4 Pages