TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ● Including two devices in US6 (ultra super mini type with 6 leads) ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：PNP + NPN\nInternal Connection：2-in-1 (Point-symmetrical)\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current (Q1) IC -0.1 A \nCollector Current (Q2) IC 0.1 A \nCollector-emitter voltage (Q1) VCEO -50 V \nCollector-emitter voltage (Q2) VCEO 50 V ;

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：PNP + NPN\nInternal Connection：2-in-1 (Point-symmetrical)\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current (Q1) IC -0.1 A \nCollector Current (Q2) IC 0.1 A \nCollector-emitter voltage (Q1) VCEO -50 V \nCollector-emitter voltage (Q2) VCEO 50 V ;

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact e

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 12.8 VOLT NOMINAL ZENER VOLTAGE ± 5 • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

17-W, 2-Channel BTL AF High-Efficiency Power Amplifier for Car Stereo Systems

Overview The LA4905 is a BTL 2-channel power amplifier IC for use in car audio systems. Increases in the number of external components are held to a minimum by adopting both a signal-following type switching scheme in the amplifier’s output stage power supply, and a newly-developed nonlinear ampl

GaAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems ■ Features ● High-power output, high-efficiency: PO = 15 mW (min.) ● Fast response and high-speed modulation capability: fC = 30 MHz (typ.) ● Transparent epoxy resin package

Uni- and Bipolar Hall IC Switches for Magnetic Field Applications

Features • Temperature compensated magnetic performance • Digital output signal • For unipolar and alternating magnetic fields • Large temperature range • Protection against reversed polarity • Output protection against electrical disturbances

Uni- and Bipolar Hall IC Switches for Magnetic Field Applications

Features • Temperature compensated magnetic performance • Digital output signal • For unipolar and alternating magnetic fields • Large temperature range • Protection against reversed polarity • Output protection against electrical disturbances