TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • Including two devices in US6 (ultra super mini type with 6 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN1967~RN1969

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch Small Mold (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：PNP×2\nInternal Connection：2-in-1 (Parallel)\nComplementary Product：RN1968FE\nRoHS Compatible Product(s) (#)：Available\n Collector Current (Q1) IC -0.1 A \nCollector Current (Q2) IC -0.1 A \nCollector-emitter voltage (Q1) VCEO -50 V \nCollector-emitter voltage (Q2) VCEO -50 V \n;

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：PNP×2\nInternal Connection：2-in-1 (Parallel)\nComplementary Product：RN1968FS\nRoHS Compatible Product(s) (#)：Available Collector Current (Q1) IC -0.05 A \nCollector Current (Q2) IC -0.05 A \nCollector-emitter voltage (Q1) VCEO -20 V \nCollector-emitter voltage (Q2) VCEO -20 V ;

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch Small Mold (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Low Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current ● Low Static Drain–Source On–State Resistance

BLUETOOTHTM TRANSCEIVER

Product Description The RF2968 is a monolithic integrated circuit intended for use as a low-cost FSK transceiver in Bluetooth applications. The device is provided in 32-lead plastic LPCC packaging and is designed to provide a fully-functional FSK transceiver. The chip is intended for Bluetooth ap

475 MHz Lowpass Filter

文件：64.68 Kbytes Page：3 Pages