TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications • Including two devices in US6 (ultra super mini type with 6 leads) • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process • Complementary to RN1967~RN1969

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch Small Mold (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：PNP×2\nInternal Connection：2-in-1 (Parallel)\nComplementary Product：RN1968FE\nRoHS Compatible Product(s) (#)：Available\n Collector Current (Q1) IC -0.1 A \nCollector Current (Q2) IC -0.1 A \nCollector-emitter voltage (Q1) VCEO -50 V \nCollector-emitter voltage (Q2) VCEO -50 V \n;

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：PNP×2\nInternal Connection：2-in-1 (Parallel)\nComplementary Product：RN1968FS\nRoHS Compatible Product(s) (#)：Available Collector Current (Q1) IC -0.05 A \nCollector Current (Q2) IC -0.05 A \nCollector-emitter voltage (Q1) VCEO -20 V \nCollector-emitter voltage (Q2) VCEO -20 V ;

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch Small Mold (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Low Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current ● Low Static Drain–Source On–State Resistance

BLUETOOTHTM TRANSCEIVER

Product Description The RF2968 is a monolithic integrated circuit intended for use as a low-cost FSK transceiver in Bluetooth applications. The device is provided in 32-lead plastic LPCC packaging and is designed to provide a fully-functional FSK transceiver. The chip is intended for Bluetooth ap

475 MHz Lowpass Filter

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