TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN1301~1306

Bias resistor built-in transistor (BRT)

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 50V 0.1A USM 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：AUTO AEC-Q SINGLE PNP , R1=4.7KO 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

SOT-23 Plastic-Encapsulate MOSFETS

文件：5.03147 Mbytes Page：5 Pages

-2.8A竊?20V P-CHANNEL MOSFET

文件：111.41 Kbytes Page：4 Pages

10V P-Channel Enhanced MOS FET

文件：171.02 Kbytes Page：3 Pages