RN2105晶体管资料
RN2105别名：RN2105三极管、RN2105晶体管、RN2105晶体三极管
RN2105生产厂家：日本东芝公司
RN2105制作材料：Si-P+R
RN2105性质：表面帖装型 （SMD）
RN2105封装形式：直插封装
RN2105极限工作电压：50V
RN2105最大电流允许值：0.1A
RN2105最大工作频率：<1MHZ或未知
RN2105引脚数：3
RN2105最大耗散功率：0.4W
RN2105放大倍数：
RN2105图片代号：H-15
RN2105vtest：50
RN2105htest：999900
- RN2105atest：0.1
RN2105wtest：0.4
RN2105代换 RN2105用什么型号代替：DTA123JE,
RN2105价格
参考价格：￥0.2831
型号：RN2105ACT(TPL3) 品牌：Toshiba 备注：这里有RN2105多少钱，2026年最近7天走势，今日出价，今日竞价，RN2105批发/采购报价，RN2105行情走势销售排行榜，RN2105报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RN2105 | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1101~RN1106 | TOSHIBA 东芝 |   | |
RN2105 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1101~RN1106 | TOSHIBA 东芝 | | |
RN2105 | Bias resistor built-in transistor (BRT) Application Scope：General-purpose\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1105\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC -0.1 A \nCollector-emitter voltage VCEO -50 V ; | TOSHIBA 东芝 | | |
RN2105 | Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 文件：572.07 Kbytes Page：8 Pages | TOSHIBA 东芝 | | |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Extra small package (CST3) is applicable for extra high density fabrication. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever mor | TOSHIBA 东芝 | | ||
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost | TOSHIBA 东芝 | | ||
Bias resistor built-in transistor (BRT) Application Scope：General-purpose\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1105CT\nRoHS Compatible Product(s) (#)：Available Collector Current IC -0.05 A \nCollector-emitter voltage VCEO -20 V ; | TOSHIBA 东芝 | | ||
Bias resistor built-in transistor (BRT) Application Scope：General-purpose\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1105MFV\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Collector Current IC -0.1 A \nCollector-emitter voltage VCEO -50 V ; | TOSHIBA 东芝 | | ||
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering | TOSHIBA 东芝 | | ||
封装/外壳：SC-75，SOT-416 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：AUTO AEC-Q TR PNP Q1BSR=2.2KOHM, 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ETC 知名厂家 | ETC | | |
封装/外壳：SC-101，SOT-883 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS PNP 50V 0.08A CST3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ETC 知名厂家 | ETC | | |
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms The MPC2105A/B and the MPC2106A/B are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance with the PowerPC Reference Platform (PReP) and the PowerPC Common Hardware Reference Platform (CHRP) specifications. • PowerPC–style Burst Counte | MOTOROLA 摩托罗拉 | | ||
21 Voice ROM Description The MSS6605 is a single-chip CMOS VLSI ROM that can memorize voice up to 60 seconds using MOSEL qualified coding method (MPCM) at 5.8 KHz. Three addressing interfaces are provided: CPU mode, KEYBOARD mode and MATRIX mode for versatile applications. The voice content can be stored sep | MOSEL 茂矽电子 | | ||
21/32/43/60 VOICE ROM Description The MSS6605 is a single-chip CMOS VLSI ROM that can memorize voice up to 60 seconds using MOSEL qualified coding method (MPCM) at 5.8 KHz. Three addressing interfaces are provided: CPU mode, KEYBOARD mode and MATRIX mode for versatile applications. The voice content can be stored sep | MOSEL 茂矽电子 | | ||
21/32/43/60 VOICE ROM Description The MSS6605 is a single-chip CMOS VLSI ROM that can memorize voice up to 60 seconds using MOSEL qualified coding method (MPCM) at 5.8 KHz. Three addressing interfaces are provided: CPU mode, KEYBOARD mode and MATRIX mode for versatile applications. The voice content can be stored sep | MOSEL 茂矽电子 | | ||
21/32/43/60 VOICE ROM Description The MSS6605 is a single-chip CMOS VLSI ROM that can memorize voice up to 60 seconds using MOSEL qualified coding method (MPCM) at 5.8 KHz. Three addressing interfaces are provided: CPU mode, KEYBOARD mode and MATRIX mode for versatile applications. The voice content can be stored sep | MOSEL 茂矽电子 | |
RN2105产品属性
- 类型
描述
- Package name：
SOT-416 (SSM)
- Width×Length×Height(mm)：
1.6 x 1.6 x 0.7
- Number of pins：
3
- Surface mount package：
Y
- Polarity：
PNP
- Internal Connection：
Single
- Q1Base Series Resistance (Typ.)(kΩ)：
2.2
- Q1Base-Emitter Resistance (Typ.)(kΩ)：
47
- Q1VCEO (Max)(V)：
-50
- Q1IC (Max)(A)：
-0.1
- AEC-Q101：
Qualified(*)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
2016+ |
SOT723 |
40000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TOSHIBA |
24+ |
SOT423 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
TOSHIBA/东芝 |
25+ |
原装 |
32000 |
TOSHIBA/东芝全新特价RN2105F即刻询购立享优惠#长期有货 |
|||
TOSHIBA |
24+/25+ |
24000 |
原装正品现货库存价优 |
||||
Bychip/百域芯 |
25+ |
SOT-523 |
20000 |
原装 |
|||
SOT-416 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
TOSHIBA/东芝 |
2450+ |
SOT323 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TOSHIBA/东芝 |
15+ |
SOT723 |
880000 |
明嘉莱只做原装正品现货 |
|||
Bychip/百域芯 |
21+ |
SOT-523 |
30000 |
优势供应 品质保障 可开13点发票 |
|||
TOS |
25+23+ |
SOT-423 |
38205 |
绝对原装正品全新进口深圳现货 |
RN2105规格书下载地址
RN2105参数引脚图相关
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RN2105数据表相关新闻
RN4020-VRMBEC133
进口代理
2023-4-7RN1723-I/RM100
RN1723-I/RM100
2023-3-27RN 1/4W 1K F T/B A1
属性 参数值 商品目录 金属膜电阻 阻值（欧姆） 1K 精度 ±1%_ 安装类型 通孔 功率 1/4W 温度系数 ±50ppm/°C属性 参数值 商品目录 金属膜电阻 阻值（欧姆） 1K 精度 ±1%_ 安装类型 通孔 功率 1/4W 温度系数 ±50ppm/°C
2020-12-4RN2706JE
类别 分立半导体产品 晶体管 - 双极（BJT）- 阵列 - 预偏置 制造商 Toshiba Semiconductor and_Storage 系列 - 包装 带卷（TR） 零件状态 有源 晶体管类型 2 PNP - 预偏压（双）（耦合发射器） 电流 - 集电极 (Ic)（最大值） 100mA 电压 - 集射极击穿（最大值） 50V 电阻器 - 基极 (R1) 4.7 千欧 电阻
2020-10-15RN171-I/RM原装MicrochipWiFi模块
只做原装，假一罚十，可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-3-14RN4984FE绝对原装正品现货
瀚佳科技(深圳)有限公司 专业工厂一站式全套配单服务
2019-1-13
DdatasheetPDF页码索引
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