TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. ● Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. ● Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：NPN×2\nInternal Connection：2-in-1 (Parallel)\nComplementary Product：RN2963FE\nRoHS Compatible Product(s) (#)：Available Collector Current (Q1) IC 0.1 A \nCollector Current (Q2) IC 0.1 A \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter voltage (Q2) VCEO 50 V ;

NPN Epitaxial Silicon Transistor

Audio Power Amplifier Applications • Complement to FJC1308 • High Collector Current • Low Collector-Emitter Saturation Voltage

Ultra High Sensitivity Gateable Channel Photomultiplier DC-Modules

Description The Channel Photomultiplier DC Module series is designed for all low light applications e.g. in industries, life science or medical analysis, in high energy physics or pure research. Features · High dynamic range · No cooling required · Very high stability in noise lev

Integrated Circuit Negative, 3-Terminal Voltage Regulator

Description: The NTE1961 through NTE1977 series of monolithic 3–terminal negative voltage regulators employ internal current limiting, thermal shut–down, and safe–area compensation in an isolated TO220 type package making them essentially indestrucible. If adequate heat sinking is provided, the

Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply

文件：562.12 Kbytes Page：5 Pages

Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply

文件：562.12 Kbytes Page：5 Pages